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1

NBTI in Nanoscale MOSFETs—The Ultimate Modeling Benchmark

Grasser, Tibor, Rott, Karina, Reisinger, Hans, Waltl, Michael, Schanovsky, Franz, Kaczer, Ben

Journal:

IEEE Transactions on Electron Devices

Année:

2014

Langue:

english

Fichier:

PDF, 1.50 MB

english, 2014

2

Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors

Stampfer, Bernhard, Schanovsky, Franz, Grasser, Tibor, Waltl, Michael

Journal:

Année:

2020

Fichier:

PDF, 1008 KB

2020

3

[IEEE 2013 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2013.10.13-2013.10.17)] 2013 IEEE International Integrated Reliability Workshop Final Report - Mechanisms and performance of metal oxide resistive RAM (RRAM)

Chen, An, Meneghini, Matteo, Van Blerkom, Daniel, Schanovsky, Franz, Shaw, Tom

Année:

2013

Langue:

english

Fichier:

PDF, 62 KB

english, 2013

4

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film

Sverdlov, Viktor, Baumgartner, Oskar, Windbacher, Thomas, Schanovsky, Franz, Selberherr, Siegfried

Année:

2009

Langue:

english

Fichier:

PDF, 267 KB

english, 2009

5

[IEEE 2011 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2011.10.16-2011.10.20)] 2011 IEEE International Integrated Reliability Workshop Final Report - On the microscopic limit of the reaction-diffusion model for the negative bias temperature instability

Schanovsky, Franz, Grasser, Tibor

Année:

2011

Langue:

english

Fichier:

PDF, 2.79 MB

english, 2011

6

[IEEE 13th International Workshop on Computational Electronics (IWCE) - Beijing, China (2009.05.27-2009.05.29)] 2009 13th International Workshop on Computational Electronics - The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers

Sverdlov, Viktor, Baumgartner, Oskar, Kosina, Hans, Selberherr, Siegfried, Schanovsky, Franz, Esseni, David

Année:

2009

Langue:

english

Fichier:

PDF, 641 KB

english, 2009

7

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - On the microscopic limit of the modified reaction-diffusion model for the negative bias temperature instability

Schanovsky, Franz, Grasser, Tibor

Année:

2012

Langue:

english

Fichier:

PDF, 253 KB

english, 2012

8

Bistable Defects as the Cause for NBTI and RTN

Goes, Wolfgang, Schanovsky, Franz, Reisinger, Hans, Kaczer, Ben, Grasser, Tibor

Journal:

Solid State Phenomena

Année:

2011

Langue:

english

Fichier:

PDF, 469 KB

english, 2011

9

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - (Invited) Charge Trapping and the Negative Bias Temperature Instability

Goes, Wolfgang, Schanovsky, Franz, Hehenberger, Philipp, Wagner, Paul-Juergen, Grasser, Tibor

Année:

2010

Langue:

english

Fichier:

PDF, 4.54 MB

english, 2010

10

[ECS 24th Symposium on Microelectronics Technology and Devices - Natal, Brazil (August 31 - September 3, 2009)] ECS Transactions - Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films

Sverdlov, Viktor A., Baumgartner, Oskar, Windbacher, Thomas, Schanovsky, Franz, Selberherr, Siegfried

Année:

2009

Langue:

english

Fichier:

PDF, 356 KB

english, 2009

11

[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance

Sverdlov, Viktor, Baumgartner, Oskar, Windbacher, Thomas, Schanovsky, Franz, Selberherr, Siegfried

Année:

2009

Langue:

english

Fichier:

PDF, 389 KB

english, 2009

12

[IEEE 2010 International Workshop on Computational Electronics (IWCE) - Pisa, Italy (2010.10.26-2010.10.29)] 2010 14th International Workshop on Computational Electronics - Ab-initio calculation of the vibrational influence on hole-trapping

Schanovsky, Franz, Goes, Wolfgang, Crasser, Tibor

Année:

2010

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2010

13

[IEEE ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC) - Leuven, Belgium (2017.9.11-2017.9.14)] 2017 47th European Solid-State Device Research Conference (ESSDERC) - Physical modeling of the hysteresis in M0S2 transistors

Knobloch, Theresia, Rzepa, Gerhard, Illarionov, Yury Yu., Waltl, Michael, Schanovsky, Franz, Jech, Markus, Stampfer, Bernhard, Furchi, Marco M., Muller, Thomas, Grasser, Tibor

Année:

2017

Langue:

english

Fichier:

PDF, 1011 KB

english, 2017

14

A Physical Model for the Hysteresis in MoS2 Transistors

Knobloch, Theresia, Rzepa, Gerhard, Illarionov, Yury Yu., Waltl, Michael, Schanovsky, Franz, Stampfer, Bernhard, Furchi, Marco M., Mueller, Thomas, Grasser, Tibor

Journal:

IEEE Journal of the Electron Devices Society

Année:

2018

Langue:

english

Fichier:

PDF, 714 KB

english, 2018